SSM6J25FE 2014-03-01 1 toshiba field effect transistor silicon p channel mos type (u-mosiii) SSM6J25FE high speed switching applications ? optimum for high-density mounting in small packages ? low on-resistance: r on = 260m ? (max) (@v gs = -4 v) r on = 430m ? (max) (@v gs = -2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gss 12 v dc i d -0.5 drain current pulse i dp -1.5 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ed on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm es6 jedec D jeita D toshiba 2-2n1a weight: 3.0 mg (typ.) 6 ph 4 1 2 3 5 4 1 2 3 6 5 0.20.05 6 1.20.05 1.60.05 1.00.05 1 2 0.5 0.5 3 1.60.05 0.120.05 5 4 0.550.05 1,2,5,6 :drain 3 :gate 4 :source start of commercial production 2004-03
SSM6J25FE 2014-03-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 12v, v ds = 0 ? ? 1 a v (br) dss i d = -1 ma, v gs = 0 -20 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = +12 v -8 ? ? v drain cut-off current i dss v ds = -20 v, v gs = 0 ? ? -1 a gate threshold voltage v th v ds = -3 v, i d = -0.1 ma -0.5 ? -1.1 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -0.25 a (note2) 0.65 1.3 ? s i d = -0.25 a, v gs = -4 v (note2) ? 210 260 drain-source on-resistance r ds (on) i d = -0.25 a, v gs = -2.5 v (note2) ? 310 430 m input capacitance c iss v ds = -10 v, v gs = 0, f = 1 mhz ? 218 ? pf reverse transfer capacitance c rss v ds = -10 v, v gs = 0, f = 1 mhz ? 42 ? pf output capacitance c oss v ds = -10 v, v gs = 0, f = 1 mhz ? 52 ? pf turn-on time t on ? 16 ? switching time turn-off time t off v dd = -10 v, i d = -0.25 a, v gs = 0 to -2.5 v, r g = 4.7 ? 15 ? ns note2: pulse test switching time test circuit precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = - 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration when using the device. v dd = -10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 2.5v 10 s v dd out r g r l (c) v out t on 90% 10% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit
SSM6J25FE 2014-03-01 3 rds(on) - id 0 100 200 300 400 500 -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 drain current id (ma) drain-source on resistance rds(on) (m ? ) common source ta=25c vgs=-4 v -2.5v rds(on) - vgs 0 100 200 300 400 500 -10-9-8-7-6-5 -4-3-2 -1 0 gate-source voltage vgs (v) drain-source on resistance rds(on) (m ? ) common source id=-250ma ta=100c 25c -25c id - vds -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 -1 -0.8 -0.6 -0.4 -0.2 0 drain-source voltage vds (v) drain current id (ma ) common source ta=25c vgs=-1 .6 -1.8 -2.0 -5.0 -3.0 -4.0 id - vgs 0.01 0.1 1 10 100 1000 10000 -3 -2 -1 0 gate-source voltage vgs (v) drain current id (ma) common source vd s=-3 v ta=100c 25 -25c - - - - - - - - rds(on) - ta 0 100 200 300 400 500 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) drain-source on resistance rds(on) (m ? ) vgs=-4v -2.5v common source id=-250ma vth - ta -1 -0.8 -0.6 -0.4 -0.2 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) gate threshold voltage vth(v) common source id=-0.1ma vd s=-3 v
SSM6J25FE 2014-03-01 4 c - vds 10 100 1000 -0 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf ) common source vgs=0v f=1mhz ta=25c ciss coss crss idr - vds 0 200 400 600 800 1000 1200 1400 1600 0.0 0.2 0.4 0.6 0.8 1.0 drain-source voltage vds (v) drain reverse current idr (ma ) common source vgs=0 v ta=25c |yfs | - id 0 1 10 -10 -100 -1000 -10000 drain current id (ma) forward transfer admittance |yfs| (s) common source vd s=-3 v ta=25c ta=100c 25c -25c pd - ta 0 200 400 600 800 1000 0 20 40 60 80 100 120 140 160 ambient temperature ta( ) drain power dissipation pd(mw) mounted fr4 board (25.4mm*25.4mm*1.6t cu pad :645mm 2 ) dc t - id 1 10 100 1000 -10 -100 -1000 -10000 drain current id (ma) switching time t (ns) common source vdd=-10v vgs=0 ~- 2.5v ta=25c toff tr ton tf
SSM6J25FE 2014-03-01 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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